Wet Etching Recipes - Revision history

John d: bolded the table header

2025-10-11T16:25:29Z

bolded the table header

← Older revision		Revision as of 16:25, 11 October 2025
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	*[[Chemical List\|'''The Chemical Lists''']] show stocked chemicals, photolithography chemicals, and how to bring new chemicals.		*[[Chemical List\|'''The Chemical Lists''']] show stocked chemicals, photolithography chemicals, and how to bring new chemicals.

	==Table of Wet Etching Recipes==		=='''Table of Wet Etching Recipes'''==
	''Use the ↑ ↓ Arrows in the header row to sort the entire table by material, selectivity, etchant etc.''		''Use the ↑ ↓ Arrows in the header row to sort the entire table by material, selectivity, etchant etc.''
	{\| class="wikitable sortable"		{\| class="wikitable sortable"

John d: /* Gold Plating Bench (Technic SEMCON 1000) */ updated recipe to 100nm

2025-10-01T00:55:18Z

Gold Plating Bench (Technic SEMCON 1000): updated recipe to 100nm

← Older revision		Revision as of 00:55, 1 October 2025
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	Electroplating first requires a Gold seed layer to be present on all surfaces to be plated. Common ways to produce this are to:		Electroplating first requires a Gold seed layer to be present on all surfaces to be plated. Common ways to produce this are to:

	*[[Tool List#Sputter Deposition\|Sputter-coat]] a thin (~~~10nm~~) Au layer on all surfaces of the wafer, being careful to consider shadowing effects during the dep (eg. in high-aspect ratio trenches).		*[[Tool List#Sputter Deposition\|Sputter-coat]] a thin (~100nm) Au "seed layer" on all surfaces of the wafer, being careful to consider shadowing effects during the dep (eg. in high-aspect ratio trenches).
	*Perform photolithography to protect (and prevent plating) in desired areas - areas with no photoresist will be plated.		*Perform photolithography to protect (and prevent plating) in desired areas - areas with no photoresist will be plated.
			**Leave ''Open'' the 4 contact points on the edge of the wafer, or some other contact point, for an electrode to make contact to the Seed layer.
			**Optionally use EBR100 to swab away photoresist from the contact points.
	*Perform the electroplating on the [[Gold Plating Bench\|Technic SemCon]], contacting the seed layer with electrodes and executing the program for the desired current/time to achieve the plating thickness (typically microns).		*Perform the electroplating on the [[Gold Plating Bench\|Technic SemCon]], contacting the seed layer with electrodes and executing the program for the desired current/time to achieve the plating thickness (typically microns).
	*Strip the photoresist using standard solvents.		*Strip the photoresist using standard solvents.
	*Use the [[CAIBE (Oxford Ion Mill)\|Oxford Ion Mill]] to blanket etch the ~~10nm~~ seed layer all over the wafer (the ~~10nm~~ removed from the plated regions will be negligible).		*Use the [[CAIBE (Oxford Ion Mill)\|Oxford Ion Mill]] to blanket etch the seed layer all over the wafer (the 100nm removed from the plated regions will be negligible compared to the ~1µm plated).

	==[[Chemical-Mechanical Polisher (Logitech)\|Chemi-Mechanical Polishing (CMP)]]==		==[[Chemical-Mechanical Polisher (Logitech)\|Chemi-Mechanical Polishing (CMP)]]==

Gopimeena: /* Table of Wet Etching Recipes */

2025-06-09T23:35:02Z

Table of Wet Etching Recipes

← Older revision		Revision as of 23:35, 9 June 2025
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	\|		\|
	\|'''''Dangerous''''' boiling hazard - see '''''[[Wet Etching Recipes#Piranha%20Solution\|Piranha Solution]]'''''		\|'''''Dangerous''''' boiling hazard - see '''''[[Wet Etching Recipes#Piranha%20Solution\|Piranha Solution]]'''''
	section below. Etches Ti		section below. Etches Ti, Ni, Hf
	\|[[Demis D. John]], 2017		\|[[Demis D. John]], 2017
	\|-		\|-

John d: /* Table of Wet Etching Recipes */ rename "diluted HF" to "HF - diluted" to sorting by alphabetical sorts it along with other HF lines.

2024-11-19T01:19:48Z

Table of Wet Etching Recipes: rename "diluted HF" to "HF - diluted" to sorting by alphabetical sorts it along with other HF lines.

← Older revision		Revision as of 01:19, 19 November 2024
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	\|-		\|-
	\|SiO2 ''(ALD -BDEAS 300C)''		\|SiO2 ''(ALD -BDEAS 300C)''
	\|~~Diluted~~ HF ("Buffered ~~HF Improved~~"~~, Transene~~) ~~with Di=1:100~~		\|HF ("Buffered")
			Diluted with DI
			BHF:H2O = 1:100
	\|~7.46		\|~7.46
	\|		\|

Biljana: /* Table of Wet Etching Recipes */ BHF:DI =1:100 etch rate for ALD -SiO2 BDEAS film

2024-11-08T19:10:59Z

Table of Wet Etching Recipes: BHF:DI =1:100 etch rate for ALD -SiO2 BDEAS film

@@ Line 179: / Line 179: @@
 |Biljana Stamenic
 |-
 |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#SiO2_deposition_.28IBD.29 SiO2 (IBD)]

John d: /* Compound Semiconductor Etching */ updated Claswson link to state author and date, added description of the paper

2024-09-24T18:05:28Z

Compound Semiconductor Etching: updated Claswson link to state author and date, added description of the paper

← Older revision		Revision as of 18:05, 24 September 2024
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	===Compound Semiconductor Etching===		===Compound Semiconductor Etching===
	[http://www.sciencedirect.com/science/article/pii/S0927796X00000279 Guide to references on III±V semiconductor chemical etching]		[http://www.sciencedirect.com/science/article/pii/S0927796X00000279 Guide to references on III±V semiconductor chemical etching (A.R. Clawson, 2001)]

			* Impressively vast list of various III-V wet etches, organized by various applications (eg. "selective GaAs against AlGaAs" or "non-selective InP/InGaAsP" etc.)
	Please add any confirmed etches from this reference to the {{HLink\|Wet Etching Recipes\|The Master Table of Wet Etching (Include All Materials)}}.		* Please add any confirmed etches from this reference to the {{HLink\|Wet Etching Recipes\|The Master Table of Wet Etching (Include All Materials)}}.

	===Metal Etching===		===Metal Etching===

Biljana: /* Table of Wet Etching Recipes */

2024-08-30T22:14:34Z

Table of Wet Etching Recipes

← Older revision		Revision as of 22:14, 30 August 2024
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	\|-		\|-
	\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR ''(~~UNAXIS~~ VLR)'']		\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR ''(Unaxis VLR)'']
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~170		\|~170
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	2023		2023
	\|-		\|-
			\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 HDR ''(Unaxis VLR)'']
	\|SiO2 LDR (Unaxis)
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~230		\|~230
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	2023		2023
	\|-		\|-
			\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiN ''(Unaxis VLR)'']
	\|SiN (Unaxis)
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~10		\|~10
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	2023		2023
	\|-		\|-
	\|SiN Low Stress (Unaxis)		\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiN Low Stress ''(Unaxis VLR)'']
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~135		\|~135

Biljana: /* Table of Wet Etching Recipes */

2024-08-30T22:12:08Z

Table of Wet Etching Recipes

← Older revision		Revision as of 22:12, 30 August 2024
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	2023		2023
	\|-		\|-
	\|https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR ''(UNAXIS VLR)'']		\|[https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR ''(UNAXIS VLR)'']
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~170		\|~170

Biljana: /* Table of Wet Etching Recipes */

2024-08-30T22:11:28Z

Table of Wet Etching Recipes

← Older revision		Revision as of 22:11, 30 August 2024
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	2023		2023
	\|-		\|-
	\|https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR (UNAXIS)]		\|https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR ''(UNAXIS VLR)'']
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~170		\|~170

Biljana: /* Table of Wet Etching Recipes */

2024-08-30T22:10:03Z

Table of Wet Etching Recipes

← Older revision		Revision as of 22:10, 30 August 2024
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	2023		2023
	\|-		\|-
	\|https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29]		\|https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 SiO2 LDR (UNAXIS)]
	\|HF ("Buffered HF Improved", Transene)		\|HF ("Buffered HF Improved", Transene)
	\|~170		\|~170