XeF2 Etch (Xetch) - Revision history

Millerski w: Updated SOP

2023-10-30T22:03:10Z

Updated SOP

← Older revision		Revision as of 22:03, 30 October 2023
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	*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]		*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
	*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]		*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
	*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch ~~Operating~~ Instructions}}		*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Instructions}}

	==Operation Procedure==		==Operation Procedure==

Millerski w: Updated SOP

2023-10-30T22:02:02Z

Updated SOP

← Older revision		Revision as of 22:02, 30 October 2023
Line 27:		Line 27:
	*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]		*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
	*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]		*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
	*{{file\|XACTI XeF2 Etch Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}		*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

	==Operation Procedure==		==Operation Procedure==

Millerski w: Updated SOP

2023-10-30T22:00:22Z

Updated SOP

← Older revision		Revision as of 22:00, 30 October 2023
Line 27:		Line 27:
	*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]		*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
	*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]		*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
	*{{file\|XACTI XeF2 Etch ~~Operating~~ Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}		*{{file\|XACTI XeF2 Etch Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

	== Operation Procedure ==		==Operation Procedure==

	* [https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]		*[https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

	==Recipes==		==Recipes==

Millerski w: Updated SOP

2023-10-30T21:59:19Z

Updated SOP

← Older revision		Revision as of 21:59, 30 October 2023
Line 29:		Line 29:
	*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}		*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

	== ~~Recipes~~ ==		== Operation Procedure ==

			* [https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

			==Recipes==

	*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29\|Other Dry Etching Recipes: XeF2 Etcher]]		*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29\|Other Dry Etching Recipes: XeF2 Etcher]]

John d: Link to recipes oage

2023-03-05T22:36:00Z

Link to recipes oage

← Older revision		Revision as of 22:36, 5 March 2023
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	\|toolid=31		\|toolid=31
	}}		}}
	= About =		==About==
	The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature.		The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature.

Line 23:		Line 23:
	For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.		For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

	=Documentation=		==Documentation==

	*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]		*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
	*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]		*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
	*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}		*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

			== Recipes ==

			*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29\|Other Dry Etching Recipes: XeF2 Etcher]]

Silva at 17:55, 30 August 2022

2022-08-30T17:55:07Z

← Older revision		Revision as of 17:55, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=XeF2.jpg		\|picture=XeF2.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Bill Millerski		\|super= Bill Millerski
			\|super2= Don Freeborn
	\|phone=(805)839-3918x216		\|phone=(805)839-3918x216
	\|location=Bay 2		\|location=Bay 2

Silva at 15:32, 28 October 2021

2021-10-28T15:32:17Z

← Older revision		Revision as of 15:32, 28 October 2021
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	\|picture=XeF2.jpg		\|picture=XeF2.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Brian~~ ~~Lingg~~		\|super= Bill Millerski
	\|phone=(805)839-3918x216		\|phone=(805)839-3918x216
	\|location=Bay 2		\|location=Bay 2

John d: /* About */ added wafer size

2020-06-05T15:04:33Z

About: added wafer size

← Older revision		Revision as of 15:04, 5 June 2020
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	}}		}}
	= About =		= About =
	The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF<sub>2</sub> gas and, then, pumped out (to 0.3 Torr). You can also add N<sub>2</sub> gas, together with XeF<sub>2</sub> gas, into the etch chamber for some applications. There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.		The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature.

			The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF<sub>2</sub> gas and, then, pumped out (to 0.3 Torr). You can also add N<sub>2</sub> gas, together with XeF<sub>2</sub> gas, into the etch chamber for some applications.

			There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

			Maximum Wafer size is 6".

			For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

	=Documentation=		=Documentation=
	*[~~[media:~~Xactic-XetchX3-System-Manual.pdf\|System Manual]]		*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
	*[~~[media:~~XeF2-Results.pdf\|Si Etching Profile & Results]]		*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
	*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}		*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

Silva at 17:35, 15 April 2020

2020-04-15T17:35:49Z

← Older revision		Revision as of 17:35, 15 April 2020
Line 2:		Line 2:
	\|picture=XeF2.jpg		\|picture=XeF2.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Don~~ ~~Freeborn~~		\|super= Brian Lingg
	\|phone=(805)839-3918x216		\|phone=(805)839-3918x216
	\|location=Bay 2		\|location=Bay 2

Dfreeborn: /* Documentation */

2014-04-22T15:48:21Z

Documentation

← Older revision		Revision as of 15:48, 22 April 2014
Line 17:		Line 17:
	*[[media:Xactic-XetchX3-System-Manual.pdf\|System Manual]]		*[[media:Xactic-XetchX3-System-Manual.pdf\|System Manual]]
	*[[media:XeF2-Results.pdf\|Si Etching Profile & Results]]		*[[media:XeF2-Results.pdf\|Si Etching Profile & Results]]
			*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}

← Older revision		Revision as of 15:48, 22 April 2014
Line 17:		Line 17:
	*[[media:Xactic-XetchX3-System-Manual.pdf\|System Manual]]		*[[media:Xactic-XetchX3-System-Manual.pdf\|System Manual]]
	*[[media:XeF2-Results.pdf\|Si Etching Profile & Results]]		*[[media:XeF2-Results.pdf\|Si Etching Profile & Results]]
			*{{file\|XACTI XeF2 Etch Operating Instructions.pdf\|XACTI XeF2 etch Operating Instructions}}