Dry Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(UV Ozone and EVG R levels update)
(Changed FICP Si to R6 and OXFD GaN to R3)
 
(13 intermediate revisions by 3 users not shown)
Line 1: Line 1:
===<u>R3[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>


Line 44: Line 44:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al
! bgcolor="#d0e7ff" align="center" |Al
Line 51: Line 51:
|
|
|
|
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}}
⚫
|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Al_Etch_.28Panasonic_2.29 R2]
|
|
|
|
Line 60: Line 60:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Au
! bgcolor="#d0e7ff" align="center" |Au
Line 76: Line 76:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Cr
! bgcolor="#d0e7ff" align="center" |Cr
Line 92: Line 92:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Cu
! bgcolor="#d0e7ff" align="center" |Cu
Line 108: Line 108:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ge
! bgcolor="#d0e7ff" align="center" |Ge
Line 122: Line 122:
|
|
|
|
|[[Other Dry Etching Recipes|R2]]
⚫
|A
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Mo
! bgcolor="#d0e7ff" align="center" |Mo
Line 140: Line 140:
|
|
|
|
|A
|R1
|-
|-
!Nb
!Nb
Line 172: Line 172:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|-
|-
!Os
!Os
Line 204: Line 204:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ru
! bgcolor="#d0e7ff" align="center" |Ru
Line 212: Line 212:
|
|
|A
|A
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Ru_.28Ruthenium.29_Etch_.28Panasonic_2.29 R3]
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]]
|
|
|
|
Line 220: Line 220:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Si
! bgcolor="#d0e7ff" align="center" |Si
|
|
|
|
|[[RIE Etching Recipes|R4]]
|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R5]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
|
|
|
|
Line 234: Line 234:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}}
|[[Other Dry Etching Recipes|R4]]
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ta
! bgcolor="#d0e7ff" align="center" |Ta
Line 252: Line 252:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ti
! bgcolor="#d0e7ff" align="center" |Ti
Line 268: Line 268:
|
|
|
|
|A
|R1
⚫
|- bgcolor="#ffffff"
⚫
! bgcolor="#d0e7ff" align="center" |W
⚫
|
⚫
|
⚫
|
⚫
|R2
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|R1
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
|R1
⚫
|-
!TiW
⚫
|
⚫
|
|
|R2
|
|R1
|
|
|
|
|
|
|
|
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
Line 276: Line 308:
|
|
|A
|A
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3]
|
|
|
|
Line 284: Line 316:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
Line 300: Line 332:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlGaAs
! bgcolor="#d0e7ff" align="center" |AlGaAs
Line 316: Line 348:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |AlGaN
! bgcolor="#d0e7ff" align="center" |AlGaN
Line 332: Line 364:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlN
! bgcolor="#d0e7ff" align="center" |AlN
Line 348: Line 380:
|
|
|
|
|A
|R1
|-
|-
!BCB
!BCB
Line 380: Line 412:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaAs
! bgcolor="#d0e7ff" align="center" |GaAs
Line 388: Line 420:
|
|
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#GaAs_Etch_.28Panasonic_2.29 R3]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
|
|
|
|
Line 396: Line 428:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |GaN
! bgcolor="#d0e7ff" align="center" |GaN
Line 405: Line 437:
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|R1
|R1
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R3]]
|
|
|
|
Line 412: Line 444:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaSb
! bgcolor="#d0e7ff" align="center" |GaSb
Line 428: Line 460:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
Line 444: Line 476:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InGaAlAs
! bgcolor="#d0e7ff" align="center" |InGaAlAs
Line 460: Line 492:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |InGaAsP
! bgcolor="#d0e7ff" align="center" |InGaAsP
Line 476: Line 508:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InP
! bgcolor="#d0e7ff" align="center" |InP
Line 492: Line 524:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ITO
! bgcolor="#d0e7ff" align="center" |ITO
Line 508: Line 540:
|
|
|
|
|A
|R1
|-
|-
!LiNbO3
!LiNbO3
Line 524: Line 556:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
!Photoresist
!Photoresist & Organics
& ARC
|
|
|[[RIE Etching Recipes|R3]]
|[[RIE Etching Recipes|R3]]
Line 533: Line 564:
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R3]
|
|
|R3
|R3
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|
|
|A
|
|R1
|-
!ARC (Anti Reflective Coating)
|
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|
|
|
|
|
|
|
|
|
|
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiC
! bgcolor="#d0e7ff" align="center" |SiC
Line 557: Line 604:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiN
! bgcolor="#d0e7ff" align="center" |SiN
Line 565: Line 612:
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiNx_Etching_.28Panasonic_2.29 R3]
|
|
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
Line 573: Line 620:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
Line 581: Line 628:
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_2.29 R6]
|
|
|
|
Line 588: Line 635:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
|[[Other Dry Etching Recipes|R4]]
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiOxNy
! bgcolor="#d0e7ff" align="center" |SiOxNy
Line 605: Line 652:
|
|
|
|
|A
|R1
|-
|-
!SU8
!SU8
Line 629: Line 676:
|
|
|A
|A
|R1
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 R1]
|
|
|
|
Line 637: Line 684:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |TiN
! bgcolor="#d0e7ff" align="center" |TiN
Line 653: Line 700:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
Line 669: Line 716:
|
|
|
|
⚫
|A
⚫
|- bgcolor="#ffffff"
⚫
! bgcolor="#d0e7ff" align="center" |W-TiW
⚫
|
⚫
|
⚫
|
⚫
|R2
⚫
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|R1
|R1
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|
⚫
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
Line 701: Line 732:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZnS
! bgcolor="#d0e7ff" align="center" |ZnS
Line 717: Line 748:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnSe
! bgcolor="#d0e7ff" align="center" |ZnSe
Line 733: Line 764:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
Line 749: Line 780:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''

Latest revision as of 00:41, 22 October 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R6 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R2 R1
GaN R4 R1 R1 R3 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Dry_Etching_Recipes&oldid=162499"