ICP Etch 2 (Panasonic E626I): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=ICP2.jpg
|picture=ICP1.jpg
|type = Dry Etch
|type = Dry Etch
|super= Mike Silva
|super= Lee Sawyer
|super2= Tony Bosch
|phone=(805)839-3918x219
|phone=(805)839-2123
|location=Bay 2
|location=Bay 2
|email=silva@ece.ucsb.edu
|email=silva@ece.ucsb.edu
|description = ?
|description = ICP Etch
|manufacturer = Panasonic Factory Solutions
|manufacturer = Panasonic Factory Solutions
|model= E626I
|materials =
|materials =
|toolid=23
|toolid=23
}}
}}
= About =
==About==


This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.
This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.


The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.
⚫
= Detailed Specifications =


⚫
==Detailed Specifications==
⚫
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber

⚫
*RT - 80°C sample temperature for etching
⚫
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
⚫
*Optimal Emission Monitoring
⚫
*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
⚫
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
⚫
*Optimal Emission Monitoring
⚫
*Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber
⚫
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*2000 W ICP ashing chamber
⚫
*Cl<sub>2</sub>, BCl<sub>3</sub>, (Ar or CHF<sub>3</sub>), (CF<sub>4</sub> or SF<sub>6</sub>), N<sub>2</sub>, and O<sub>2</sub> in etch chamber
*RT - 250°C sample temperature for ashing
⚫
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
*Ashing pressures 50 mT - 500 mT
⚫
*Single 6” diameter wafer capable system
⚫
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
⚫
*Multiple 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*Pieces possible by mounting to 6” wafer
*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

⚫
==Documentation==


⚫
[[Link title]]=Documentation=
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*{{file|Gas-Change.pdf|Gas Change Instructions}}
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

===Online Training Video===

*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d <u>Panasonic ICP#2 Training Video</u>]
*'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

==Recipes==

*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''<u>ICP2 Etching Recipes</u>''']
**Starting point recipes for ICP2 specifically.

*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes <u>Dry Etching Recipes</u>]'''
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc.
**

== [[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Process Control Data]] ==

* Data showing "calibration" etches over time to test tool performance.

:[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]

Latest revision as of 21:22, 6 November 2024

ICP Etch 2 (Panasonic E626I)
ICP1.jpg
Location Bay 2
Tool Type Dry Etch
Manufacturer Panasonic Factory Solutions
Model E626I
Description ICP Etch
Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Tony Bosch

Recipes Dry Etch Recipes
SignupMonkey: Sign up for this tool


About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Single 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer
  • 670nm laser endpoint detector with camera and simulation software: Intellemetrics LEP 500

Documentation

Online Training Video

  • Panasonic ICP#2 Training Video
  • Important: This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.

Recipes

  • Recipes > Dry Etching Recipes
    • Table of all dry etching recipes, showing etched materials vs. tool etc.

Process Control Data

  • Data showing "calibration" etches over time to test tool performance.
example ICP2 process control chart
Click for Process Control Charts
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