PECVD Recipes

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiO₂ deposition (PECVD #1)

• SiO₂ [PECVD 1] Standard Recipe

• SiO₂ [PECVD 1] Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• SiO₂ [PECVD 1] Historical Data - Oct. 2021 and earlier

SiN deposition (PECVD #1)

• Si₃N₄ [PECVD 1] Standard Recipe
• Si₃N₄ [PECVD 1] Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• Si₃N₄ [PECVD 1] Historical Data - Oct. 2021 and earlier

Low Stress Si₃N₄ (PECVD#1)

• Low Stress Si₃N₄ [PECVD 1] Standard Recipe
• Low Stress Si₃N₄ [PECVD 1] Historical Data - 2021-10 and earlier

Example of Si₃N₄ modified stress via. varying N₂ flow.  Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive.  (Demis D. John 2011, Blumenthal Group)

SiO_xN_y deposition (PECVD #1)

• SiO_xN_y Standard Recipe
• SiO_xN_y Data 2014 - Lists film data, such as dep rate, stress, particle count, refractive index etc.
• SiO_xN_y1000A Thickness uniformity 2014

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
2. Load the recipe for plasma cleaning "CF4/O2 Clean" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

Table of Cleaning Times

Film Dep'd	Cleaning Time
SiO2	1 min clean for every 1 min dep
Si3N4	1 min clean for every 7 min dep
SiOxNy	Same as SiO2
a-Si	Same time as Si3N4

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

SiO₂ deposition (PECVD #2)

• SiO₂ [PECVD 2] New Standard Recipe - "STD SiO2 v2"
  • SiO₂ [PECVD 2] Old Standard Recipe - "STD SiO2"
• SiO₂ [PECVD 2] Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.
• SiO₂ [PECVD 2] Historical Data - Before Oct. 2021

• SiO₂ deposition rate at 150C is 35nm/min

SiN deposition (PECVD #2)

• Si₃N₄ [PECVD 2] New Standard Recipe - "STD Si3N4 v3"
  • Si₃N₄ [PECVD 2] Old Standard Recipe - "Nitride2"
• Si₃N₄ [PECVD 2] Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.
• Si₃N₄ [PECVD 2] Historical Data - Before Oct. 2021

Low-Stress SiN deposition (PECVD #2)

Low-Stress Silicon Nitride, Si₃N₄ (< ±100 MPa)

• Low Stress Si₃N₄ [PECVD 2] New Standard Recipe - "STD LS-Si3N4 v4"

• • Low Stress Si₃N₄ [PECVD 2] Old Standard Recipe - " Old LSNitride2 recipe "

• Low Stress Si₃N₄ [PECVD 2] Current Process Control Data
• Plots of Low-Stress Si₃N₄ Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.
• Low Stress Si₃N₄ [PECVD 2] Historical Data - Before Oct. 2021

  Old Versions of the recipe:

  LS Nitride2 Standard Recipe 2014-5/9/2018

  STD LSNitride2 5/9/2018

Low-Stress SiN 3xTime (PECVD #2)

This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 Demis & Biljana

• Recipe: "STD LS-Si3N4 3xTime v1"
• Process Control Data: Lists film data, such as dep rate, stress, particle count, refractive index etc.
• Process Control Charts/Plots: Calibration control limits versus date

Amorphous-Si deposition (PECVD #2)

• a-Si Recipe and Dep process 2025-11
  • Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer
• Amorphous Si Deposition Recipe (2013-09, Ning Cao)
• Amorphous Si Film - Characterization and Stress - DOE/recipe variations

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

1. If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
2. Load the recipe for cleaning "STD CF₄/O₂ Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited	Cleaning Time (Dry)
SiO2	1min. clean for every 1min. deposition
Si3N4	1min. clean for every 7min. of deposition
a-Si	1.5 min clean for every 1min of deposition
a-Si (max 30min long dep. in one single run)	Wet Clean the Upper Lid/Chamber DI water then Isopropyl Alcohol on chamber wall & portholes
Other films:(max 60min long dep. in one single run)	If > 29min total dep time (Season + Dep) Wet Clean the Upper Lid/Chamber DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

Process Control Data (Unaxis ICP-PECVD)

Regularly-run depositions and measurements of film properties over time - executed by NanoFab Interns.

• ICP-PECVD Process Control Plots - Plots of all Process Control data
• Low Deposition Rate SiO₂
• High Deposition Rate SiO₂
• Si₃N₄
• Low Stress Si₃N₄

Low Deposition Rate SiO₂ [ICP-PECVD]

• Low Deposition Rate SiO₂ [ICP-PECVD] - Standard Recipe - "SiO2 LDR250C-new May 2024

• Low Deposition Rate SiO₂ [ICP-PECVD] - Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• Low Deposition Rate SiO₂ [ICP-PECVD] - Standard Recipe - "SiO2 LDR250C - replaced on May 2024"
• Old Recipe - 2019

• Low Deposition Rate SiO₂ [ICP-PECVD] - Historical Data - before Oct. 2021

High Deposition Rate SiO₂ [ICP-PECVD]

• High Deposition Rate SiO₂ [ICP-PECVD] - Standard Recipe - "SiO2 HDR250C-new May 2024"
• High Deposition Rate SiO₂ [ICP-PECVD] - Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• High Deposition Rate SiO₂ [ICP-PECVD] - Standard Recipe - "SiO2 HDR250C-replace on May 2024"
• Old Recipe - 2019
• High Deposition Rate SiO₂ [ICP-PECVD] - Historical Data

Gap-Fill SiO₂ [ICP-PECVD]

Recipe designed by Warren Jin, please consider our publication policy if you publish using this recipe.

NOTE: Please contact tool supervisor before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.

Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

• Category = SiO2 GapFill - Std.
• FLOW: SiO2 GapFill 250C
  • Will run the sequence SiO2 GapFill 250C 450W. Do not change this!
• STEP (edit TIME only): SiO2 GapFill 250C
• Deposition rate = 99.968nm/min [9/20/23]

Si₃N₄ [ICP-PECVD]

• Si₃N₄ [ICP-PECVD] - Standard Recipe - "SiN 250C-new May 2024"

• Si₃N₄ [ICP-PECVD] - Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• Si₃N₄ [ICP-PECVD] - Standard Recipe - "SiN 250C- replaced on May 2024"

• Old Recipe - 2019
• Si₃N₄ [ICP-PECVD] - Historical Data - before Oct. 2021

Low Stress Si₃N₄ [ICP-PECVD]

• Low Stress Si₃N₄ [ICP-PECVD] - Standard Recipe - "SiN Low Stress 250C-new May 2024"
• Low Stress Si₃N₄ [ICP-PECVD] - Current Process Control Data
  • Lists film data, such as dep rate, stress, particle count, refractive index etc.

Old Data

• Low Stress Si₃N₄ [ICP-PECVD] - Standard Recipe - "SiN Low Stress 250C - replaced on May 2024"
• Old Recipe - 2019

Standard Seasoning Procedure [ICP-PECVD]

You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. Seasoning recipes:

• SiO₂ seasoning - Std
• SiN seasoning - Std

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

• SiNx etches at 20nm/min
• SiO₂ etches at 40nm/min

Standard Clean Recipe

• Post Deposition Clean 250C

General Recipe Notes (Unaxis VLR ICP-PECVD)

• RF1 = Bias
• RF2 = ICP Power
• All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
• Maximum SiO₂ Dep. thickness allowed: 800nm
  • Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.