Difference between revisions of "Rapid Thermal Processor (AET RX6)"
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| − | {{ | + | {{tool2|{{PAGENAME}} |
|picture=RTP.jpg | |picture=RTP.jpg | ||
|type = Vacuum Deposition | |type = Vacuum Deposition | ||
| − | |super= | + | |super= Bill Millerski |
| + | |super2= Tony Bosch | ||
|phone=(805)839-3918x210 | |phone=(805)839-3918x210 | ||
|location=Bay 3 | |location=Bay 3 | ||
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|toolid=42 | |toolid=42 | ||
}} | }} | ||
| − | = About | + | =About= |
| − | Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, | + | Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls. |
| − | = Detailed Specifications | + | =Detailed Specifications= |
| − | *Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for | + | *Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min. |
| + | *Maximum ramp rate of 50°C/Sec. | ||
| + | *Oxygen, Nitrogen and Forming Gas flows up to 10LPM. | ||
| + | *TC use for anneals up to 1200°C | ||
*Windows-based process monitoring and control software by Sedona Visual Controls | *Windows-based process monitoring and control software by Sedona Visual Controls | ||
=Max temp/Time= | =Max temp/Time= | ||
| − | {| | + | {| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
|- | |- | ||
| − | |width="100"|Temperature||width="75"|Time | + | | width="100" |Temperature|| width="75" |Time |
|- | |- | ||
| − | |1000°C || 1 Hour | + | |1000°C||1 Hour |
|- | |- | ||
| − | |1100°C||10 min | + | |1100°C||10 min |
|- | |- | ||
| − | |1200°C ||3 min | + | |1200°C||3 min |
|- | |- | ||
| − | |1300°C|| 10 sec | + | |1300°C||10 sec |
|- | |- | ||
|} | |} | ||
| + | =Documentation= | ||
| − | + | *[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions] | |
| − | *[ | ||
Revision as of 11:10, 30 August 2022
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About
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.
Detailed Specifications
- Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
- Maximum ramp rate of 50°C/Sec.
- Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
- TC use for anneals up to 1200°C
- Windows-based process monitoring and control software by Sedona Visual Controls
Max temp/Time
| Temperature | Time |
| 1000°C | 1 Hour |
| 1100°C | 10 min |
| 1200°C | 3 min |
| 1300°C | 10 sec |