Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (still a low etch rate on new fl cal)
(6 intermediate revisions by the same user not shown)
Line 12: Line 12:
 
|Observations/Notes
  
|Observations/Notes
 
|SEM Images (45d, cross section)
  
|SEM Images (45d, cross section)
  +
|-
  +
|9/12/22
  +
|ND_FL_091222
  +
|278
  +
|1.33
  +
|
  +
|high selectivity, may be
  +
due to new Si wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/26/22
  +
|ND_FL_082622
  +
|288
  +
|0.97
  +
|
  +
|Low selectivity/e. rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b9/30D_FICP_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/86/CS_FICP_082622_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/22/22
  +
|ND_FL_082222
  +
|252.7
  +
|0.93
  +
|
  +
|Lower selectivity/e. rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/3/3d/40D_FICP_082222_001.jpg <nowiki>[40D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/5b/CS_FICP_082222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/19/22
  +
|ND_Fl_081922
  +
|260.7
  +
|0.99
  +
|
  +
|Low selectivity/etch rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>]
 
|-
  
|-
 
|5/18/22
  
|5/18/22

Revision as of 07:30, 13 September 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
9/12/22 ND_FL_091222 278 1.33 high selectivity, may be

due to new Si wafer

[30D] [CS]
8/26/22 ND_FL_082622 288 0.97 Low selectivity/e. rate [30D] [CS]
8/22/22 ND_FL_082222 252.7 0.93 Lower selectivity/e. rate [40D] [CS]
8/19/22 ND_Fl_081922 260.7 0.99 Low selectivity/etch rate [30D][CS]
5/18/22 NP_SiO2_Fl_10 308.7 1.19 still lower etch rate [1] [2]
5/10/22 NP_SiO2_Fl_09 307.3 1.15 *etch rate seems lower* [1] [2]
4/26/22 NP_SiO2_Fl_08 344.7 1.4 [1] [2]
4/20/22 NP_SiO2_Fl_07 354.7 1.11 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 1.11 [1] [2]
3/29/22 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_Etching_SiO2_with_CHF3/CF4-Fluorine_ICP_Etcher&oldid=160452"