Difference between revisions of "Unaxis VLR Etch - Process Control Data"
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] | [[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] | ||
{| class="wikitable" | {| class="wikitable" | ||
+ | |- bgcolor="#fcfcfc" | ||
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec) | | colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec) | ||
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. | ''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. | ||
''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. | ''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. | ||
− | |- | + | |- bgcolor="#e4e7ed" |
− | |Date | + | |'''Date''' |
− | |Sample# | + | |'''Sample#''' |
− | |Etch Rate (nm/min) | + | |'''Etch Rate (nm/min)''' |
− | |Etch Selectivity (InP/SiO2) | + | |'''Etch Selectivity (InP/SiO2)''' |
− | |Comments | + | |'''Comments''' |
− | |SEM Images | + | |'''SEM Images''' |
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|4/28/22 | |4/28/22 | ||
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|1.41 | |1.41 | ||
|14.6 | |14.6 | ||
− | |Strong undercut! | + | |Strong undercut! |
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>] | |[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>] | ||
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Revision as of 16:47, 29 September 2022
Data - InP Ridge Etch (Unaxis VLR)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
4/28/22 | NP_Unaxis_03 | 1.51 | 22.2 | Normal profile - vertical and smooth. | [1] [2] |
3/30/22 | NP_Unaxis_02 | 1.41 | 14.6 | Strong undercut! | [1] [2] |
3/9/22 | NP_Unaxis_01 | 1.30 | 15.3 | [1] [2] | |
11/8/2021 | InP#2102 | 1.24 | 13.8 | [1][2] | |
2/3/2021 | InP#2101 | 1.30 | 16 | [3][4] | |
8/30/2020 | InP#2001 | 1.11 | 10.4 | [5] | |
1/31/2019 | InP#1901 | 0.88 | 9.7 | [6][7] | |
12/10/2018 | InP#1809 | 1.01 | 11.4 | [8] | |
10/3/2018 | InP#1808 | 1.01 | 13.7 | [9] | |
8/7/2018 | InP#1807 | 0.81 | 8.0 | [10] | |
5/22/2018 | InP#1806 | 0.88 | 8.4 | [11] | |
4/26/2018 | InP#1805 | 1.29 | 13.6 | [12] | |
4/10/2018 | InP#1804 | 1.12 | 12.8 | [13] | |
4/5/2018 | InP#1803 | 1.05 | 11.9 | [14] | |
3/1/2018 | InP#1802 | 0.96 | 9 | [15] | |
1/2/2018 | InP#1801 | 1.44 | 14.3 | [16] | |
12/7/2017 | InP#1714 | 0.96 | 10.4 | [17] | |
11/21/2017 | InP#1713 | 1.04 | 12.1 | [18] | |
10/23/2017 | InP#1712 | 1.11 | 13.1 | [19] | |
10/11/2017 | InP#1711 | 1 | 11 | [20] | |
8/28/2017 | InP#1710 | 1 | 11.7 | [21] | |
8/16/2017 | InP#1709 | 0.76 | 8 | [22] | |
7/6/2017 | InP#1708 | 0.98 | 12.1 | [23] | |
5/19/2017 | InP#1707 | 0.82 | 9.9 | [24] | |
5/4/2017 | InP#1706 | 0.84 | 11 | [25] | |
4/20/2017 | inP#1705 | 0.88 | 10.2 | [26] | |
3/21/2017 | InP#1704 | 1.01 | 11.3 | [27] | |
2/21/2017 | InP#1703 | 0.91 | 11.3 | [28] | |
2/7/2017 | InP#1702 | 0.75 | 7.7 | [29] | |
1/23/2017 | InP#1701 | 0.93 | 9.4 | [30] | |
12/15/2016 | InP#1615 | 0.91 | 9.3 | [31] | |
12/1/2016 | InP#1614 | 0.96 | 12.1 | [32] | |
10/4/2016 | InP#1613 | 0.92 | 8.9 | [33] |