View source for ICP Etch 1 (Panasonic E646V)

{{tool|{{PAGENAME}}
|picture=ICP2.jpg
|type = Dry Etch
|super= Lee Sawyer
|location=Bay 2
|description = ?
|manufacturer = Panasonic Factory Solutions, Japan
|materials = 
|toolid=22
}} 
= About  =

This is a three-chamber tool for etching of a variety of materials. 

Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. 

This chamber has the following gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, and O<sub>2</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously). 

The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down. 

Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back. 

Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. 

The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.

= Detailed Specifications  =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber 
*Multiple 6” diameter wafer capable system 
*Pieces possible by mounting to 6” wafer
<u>Etch Chamber:</u>
*Optimal Emission Monitoring 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT) 
*Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>) in etch chamber 
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature. 
<u>Ashing Chamber:</u>
*2000 W ICP ashing chamber 
*RT - 250°C sample temperature for ashing 
*Ashing pressures 50 mT - 500 mT 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber 
*Room Temp. to 270°C etching.  Default 50°C. 

=Documentation=
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
*{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}
*{{fl|Changing N2 to He.pdf|Gas Change Procedure (N2 & He)}}