View source for Oxygen Plasma System Recipes

{{recipes|Dry Etching}}
==[[Ashers (Technics PEII)]]==

===CF4/O2 PEii===
Gas is CF<sub>4</sub> / O<sub>2</sub> (88%/12%)

====SiN Etching====

*Pressure = 300mT–350mT
*Power = 100W
*Etch Rate ≈ 50-100 nm/min. Varies.

====Chamber Clean after CF4 Etching====

*Pressure = 300mT–350mT
*Power = 100W
*Time = 10min

===O2 Ashing===
O2; 300mT / 100W - on either Technics asher.

~15sec to make a surface hydrophilic, eg. before wet etching or applying photoreist.

~30-120sec to improve wirebonding pad metal prior to deposition of liftoff metal.

~1-5min to remove polymerized photoresist/scum after dry etching

~5-10min to strip ~0.5-1.0µm photoresist.  Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.

Use glass slides to prevent wafers from sliding on platen.

==[[Plasma Clean (Gasonics 2000)]]==
Recipes are posted at the tool, with photoresist etch rates.

==[[Plasma Clean (YES EcoClean)]]==
Some negative photoresists (eg. UVN) do not strip well without ion bombardment (requiring Technics PEii or RIE/ICP instead).

Recipe Temeprature control is by the lift-pins , with hotplate at 200°C

===N2/O2 Recipes===

*[[YES-150C-Various-Resists|Various Resists at 150C-3kW]]
*[[YES-SPR220-Various-Temps|SPR220-7 at 3kW various Temps]]

3kW recipes appear to gradually heat wafers beyond the hotplate temperature, and also expose the underside of the wafer. Very efficient cleaning of positive photoresists.

===O2-Only Recipes===
O2-Only recipes:

* Recipes names
* Gold surface oxidation results
* SPR220-7 at 3kW various temperature without N2 gas

 '''Internal To Add:''' 
 • Oxygen only-recipe names, and variations (eg. different times)
 • Guaranteed not to damage gold
 • PR Etch rates for each recipe

==[[UV Ozone Reactor]]==
The UV Ozone Reactor is used for two purposes:

*Etch away organic residue with no ion bombardment
*Oxidize surface (monolayers) of a substrate, which has been used for
**Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
**Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.

==[[Plasma Activation (EVG 810)]]==
O2 and N2 plasma activation recipes are available on this tool.

These are the qualified recipes provided by EVG and will not require adjustment of the RF Match:

*[https://signupmonkey.ece.ucsb.edu/wiki/images/a/a6/ExSitu_0.4mbar.JPG ExSitu_0.4mbar – 0.4mbar, N<sub>2</sub>, 100/75W]
*[https://signupmonkey.ece.ucsb.edu/wiki/images/0/0a/ExSitu_0.4mbar_Line2.JPG ExSitu_0.4mbar_Line2 – 0.4mbar, O<sub>2</sub>, 100/75W]
*[https://signupmonkey.ece.ucsb.edu/wiki/images/c/c7/ExSitu_0.8mbar.JPG ExSitu_0.8mbar – 0.8mbar, N<sub>2</sub>, 100/75W]
*[https://signupmonkey.ece.ucsb.edu/wiki/images/e/ec/ExSitu_0.8mbar_Line2.JPG ExSitu_0.8mbar_Line2 – 0.8mbar, O<sub>2</sub> 100/75W]
*[https://signupmonkey.ece.ucsb.edu/wiki/images/0/02/Dis_0.2mbar_Line2.JPG Dis 0.2mbar_Line2 – 0.2mbar, O<sub>2</sub>, 125/75W]