View source for PECVD 2 (Advanced Vacuum)

{{tool|{{PAGENAME}}
|picture=PECVD2.jpg
|type = Vacuum Deposition
|super= Mike Silva
|phone=(805)839-3918x219
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = Vision 310 Advanced Vacuum PECVD
|manufacturer = Veeco 
|materials = 
|toolid=15
}} 
= About  =

This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

=See Also=
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]

=Documentation=
*[[media:Advanced PECVD 2-Operating-Manual for Adv. PECVD 2.pdf|Operating Instruction Manual for Advanced PECVD 2]]
*[[Advanced PECVD 2 Standard recipes.pdf|Advanced PECVD 2 Standard Recipes]]
*[[Advanced PECVD 2 Data-particles, thickness, index.pdf|Advanced PECVD 2 Data-particles, thickness, index]]