View source for Oxford ICP Etcher - Process Control Data

__TOC__
==Process Control Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] 
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''':  60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
<u>Sample Size</u>: 2” unpatterned InP wafer “dummy” pieces, surrounding 1x1cm patterned sample, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.

<u>Seasoning</u>: 10min “Std Clean - O2/SF6 Chamber Clean 20C (Edit Time)”, then load 2” “dummy” unpatterned InP wafer pieces on Si carrier (rough side up) and run 5min of “Std InP Ridge Etch - Cl2/CH4/H2 60C”  

<u>Sample Prep</u>: Prior to dry etching, the sample is submerged in NH4OH : DI =  1:10 (3mL:30mL) for 1 min, then DI rinsed and N2 dried.  
|-
!'''Date'''
!'''Sample#'''
!'''Etch  Rate (nm/min)'''
!'''Etch  Selectivity (InP/SiO2)'''
!'''Comments'''
!'''SEM Images'''
|-
|01/11/23
|ND_60c_011123
|296
|12.7
|
|[https://wiki.nanotech.ucsb.edu/w/images/3/32/30D_oxford_011123_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/4/4a/Cs_oxford_011123_002.jpg <nowiki>[CS]</nowiki>]
|-
|12/21/22
|Tony Bosch
| colspan="4" |''Chamber wet-cleaned, significant buildup observed & cleaned up.''
|-
|12/14/22
|ND_60c_120922
|248
|9.1
|Very low etch rate and selectivity
|[https://wiki.nanotech.ucsb.edu/w/images/8/8c/30D_oxford_121422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/33/CS_oxford_121422_002.jpg <nowiki>[CS]</nowiki>]
|-
|11/18/22
|ND_60c_111822
|324
|15.2
|
|[https://wiki.nanotech.ucsb.edu/w/images/3/3d/30D_oxford_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/2/2f/CS_oxford_111822_002.jpg <nowiki>[CS]</nowiki>]
|-
|11/11/22
|ND_60c_111122
|312
|11.4
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b6/30D_oxford_111122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/90/CS_oxford_111122_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/24/22
|ND_60c_102422
|286
|13.4
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b1/30D_oxford_102422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/a/a7/CS_oxford_102422_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/14/22
|ND_60c_101422
|344
|14.8
|
|[https://wiki.nanotech.ucsb.edu/w/images/d/d3/30D_oxford_101422_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/83/CS_oxford_101422_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/3/22
|ND_60c_100322
|322
|12.7
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/30D_10302022_oxford_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/c3/CS_10302022_oxford_002.jpg <nowiki>[CS]</nowiki>]
|-
|9/30/22
|ND_60c_093022
|312
|16.9
|High etch rate and selectivity
|[https://wiki.nanotech.ucsb.edu/w/images/d/dd/30D_oxford_09302022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/23/CS_oxford_093022_004_%28copy%29.jpg <nowiki>[CS]</nowiki>]
|-
|9/6/22
|ND_60c_090622
|246
|7.5
|Very low etch rate and selectivity
|[https://wiki.nanotech.ucsb.edu/w/images/f/fb/30D_oxford_09062022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e3/CS_oxford_09062022_002.jpg <nowiki>[CS]</nowiki>]
|-
|9/1/22
|ND_60c_090122
|268
|9.4
|Low Etch rate/selectivity, could be due to recent Cl2 clean
|[https://wiki.nanotech.ucsb.edu/w/images/5/5f/30D_oxford_090122_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/5c/CS_oxford_090122_002.jpg <nowiki>[CS]</nowiki>]
|-
|8/1/22
|ND_60c_080122
|298
|9.9
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/CS_002.jpg <nowiki>[CS]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/82/45D_001.jpg <nowiki>[45D]</nowiki>]
|-
|7/1/22
|ND_60c_070122
|294
|11.9
|Did not dip in NH4OH
|[https://wiki.nanotech.ucsb.edu/w/images/6/65/45D_001_8-1-22.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/d7/InP_07012022_CS_001_copy.jpg <nowiki>[CS]</nowiki>]
|-
|5/19/22
|DJ_60c_007
|326
|TBA
|After chamber vented, cleaned (wet + dry).  Forgot NH<sub>4</sub>OH wet-etch before dry etch.  ER and profile look nominal.
|[[Media:Oxford InP 60C 45DEG02.jpg|[45°1]]],[[Media:Oxford InP 60C 45DEG05.jpg|[45°2]]] [[Media:Oxford InP 60C XS05.jpg|[XS]]]
|-
|5/11/22
|NP_60c_010
|322
|9.76
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_10_45D_003.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/aa/Oxford_60c_10_CS_008.jpg <nowiki>[XS]</nowiki>]
|-
|5/4/22
|NP_60c_009
|318
|10.5
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/e8/InP_Oxford_60c_09_45D_005.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3a/InP_Oxford_60c_09_CS_005.jpg <nowiki>[XS]</nowiki>]
|-
|4/27/22
|NP_60c_008
|320
|9.2
|directly after chamber clean. Identical results to before chamber clean.  Chamber appeared clean when opened.
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[XS]</nowiki>]
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[XS]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected.
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[XS]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|New mask pattern with long lines to cleave through.
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[XS]</nowiki>]
|-
!
!
!
!
|''↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.''
!
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
~30-40% SiO<sub>2</sub> masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[XS]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO<sub>2</sub> masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[45°]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[XS]</nowiki>]
|}

==Sample Size Effect on Etch Rate (Oxford ICP Etcher)==
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. '''etches are still smooth and vertical, but etch rate varies with sample area.'''
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''':  60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
!Date
!Sample#
!Sample Size (dimensions, mm)
!Sample Size (area, mm<sup>2</sup>)
!Etch  Rate (nm/min)
!Etch  Selectivity (InP/SiO2)
!Comments
!SEM Images
|-
|1/11/22
|<small>DJ_InPRidge</small>
|4.5 x 2.5
|11.25
|602
|64.6nm left
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|<small>DJ_InPRidge</small>
|4.5 x 3
|13.5
|563
|76.4nm left
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|<small>DJ_InP#3</small>
|4.5 x 3
|13.5
|612
|71nm left
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|<small>NP_?</small>
|10 x 10
|100
|400-450
|~250nm left
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
|
|-
|1/26/22
|<small>NP_?</small>
|1/4 of 50mm wafer
|490
|378
|276nm left
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}