View source for RIE 5 (PlasmaTherm)

{{tool2|{{PAGENAME}}
|picture=RIE5.jpg
|type = Dry Etch
|super= Aidan Hopkins
|super2= Bill Millerski
|location=Bay 2
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
|manufacturer = Plasmatherm (Unaxis)
|model = SLT 770
|materials = 
|toolid=27
}} 
==About==
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers &lt; 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished. 

Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

==Detailed Specifications==

*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar
*Full computer control or manual computer control
*Low 1 E-7 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Sample chuck He-backside cooled / heated (up to 80°C)
*Laser Etch monitor: large spot size, no camera/alignment method. 
**Requires full ~1cm witness sample/area in center of wafer.

==Documentation==

*[[RIE5 - Standard Operating procedure (Cortex Software)|RIE#5: Standard Operating Procedure (Cortex Software)]]
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}}

==Recipes==
You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29|<u>RIE5 Recipes</u>]]'''

Typical etch conditions for GaAs:

*10 mT (15 sccm BCl<sub>3</sub> / 10 sccm SiCl<sub>4</sub>)
*100 W, constant power
*60 nm / min. etch rate