View source for Test Data of etching SiO2 with CHF3/CF4-ICP1

{| class="wikitable"
|+'''ICP#1 Recipe:'''
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|-
|'''Date'''
|'''Sample#'''
|'''Etch  Rate (nm/min)'''
|'''Etch  Selectivity (SiO2/PR)'''
|'''Comments'''
|'''SEM Images'''
|-
|01/11/2023
|ND_Pan1_011123
|120
|1.28
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_011123_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/52/Cs_pan1_011123_002.jpg <nowiki>[CS]</nowiki>]
|-
|12/14/2022
|ND_Pan1_121422
|118.6
|1.30
|
|[https://wiki.nanotech.ucsb.edu/w/images/d/d6/30D_pan1_121422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/2/20/CS_pan1_121422_002.jpg <nowiki>[CS]</nowiki>]
|-
|12/09/2022
|ND_Pan1_120922
|100.6
|1.01
|double AuPd coat maybe blur image
|[https://wiki.nanotech.ucsb.edu/w/images/c/c9/30D_pan1_120922_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/9/97/CS_pan1_120922_002.jpg <nowiki>[CS]</nowiki>]
|-
|11/18/2022
|ND_Pan1_111822
|132.6
|1.25
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/30D_pan1_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_pan1_111822_002.jpg <nowiki>[CS]</nowiki>]
|-
|11/07/2022
|ND_Pan1_110722
|125.7
|1.35
|
|[https://wiki.nanotech.ucsb.edu/w/images/5/54/30D_pan1_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/81/CS_pan1_110722_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/21/2022
|ND_Pan1_102122
|114.3
|1.15
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/30D_pan1_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/29/CS_pan1_102122_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/10/2022
|ND_Pan1_101022
|127.4
|1.25
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/17/CS_pan1_101022_002.jpg <nowiki>[CS]</nowiki>]
|-
|10/3/2022
|ND_Pan1_100322
|132.9
|1.19
|High etch rate and selectivity.

May be due to angled ridge.
|[https://wiki.nanotech.ucsb.edu/w/images/1/1f/30D_10302022_pan1_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f1/CS_10302022_pan1_002.jpg <nowiki>[CS]</nowiki>]
|-
|9/26/2022
|ND_Pan1n_092622
|111.1
|0.90
|This is the new wafer
|[https://wiki.nanotech.ucsb.edu/w/images/6/68/30D_Pan1n_092622_002.jpg <nowiki>[30D]</nowiki>] [[https://wiki.nanotech.ucsb.edu/w/images/c/c7/CS_Pan1n_092622_002.jpg <nowiki>CS]</nowiki>]
|-
|9/26/2022
|ND_Pan1o_092622
|114.3
|1.01
|This is the old wafer
|[https://wiki.nanotech.ucsb.edu/w/images/0/07/45D_Pan1o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b7/CS_Pan1o_092622_002.jpg <nowiki>[CS]</nowiki>]
|-
|9/12/2022
|ND_Pan1_091222
|128.6
|1.33
|New Si wafer, higher etch rate/
selectivity
|[https://wiki.nanotech.ucsb.edu/w/images/8/8b/30D_pan1_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/57/CS_pan1_091222_002.jpg <nowiki>[CS]</nowiki>]
|-
|9/01/2022
|ND_Pan1_090122
|120.9
|1.05
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/06/30D_pan1_090122_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/1c/CS_pan1_090122_002.jpg <nowiki>[CS]</nowiki>]
|-
|8/22/2022
|ND_Pan1_082222
|112.9
|1.08
|Etch Rate seems low
and selectivity on the lower side
|[https://wiki.nanotech.ucsb.edu/w/images/4/4e/45D_Pan1_082222_001.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b9/CS_Pan1_082222_002.jpg <nowiki>[CS]</nowiki>]
|-
|8/5/2022
|ND_Pan 1_080522
|115.1
|0.90
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b2/30D_08052022_pan1_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/12/CS_08052022_pan1_001.jpg <nowiki>[CS]</nowiki>]
|-
|7/27/2022
|ND_Pan1_072722
|134.6
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_004.jpg <nowiki>[CS]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/79/30D_001.jpg <nowiki>[30D]</nowiki>]
|-
|5/10/2022
|NP_ICP1_07
|136
|1.34
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a4/ICP1_07_45D_008.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/ICP1_07_CS_006.jpg <nowiki>[2]</nowiki>]
|-
|4/26/2022
|NP_ICP1_06
|139.4
|1.36
|
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP1_05
|140
|1.13
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/13/2022
|NP_ICP1_04
|140.3
|1.24
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_ICP1_03
|136.9
|1.19
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP1_02
|133.7
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP1_01
|141.4
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|1/7/2021
|I12101
|118
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
|-
|3/3/2020
|I12004
|110
|1.05
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
|-
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
|-
|2/28/2020
|I12003
|119
|1.17
|56.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
|-
|1/23/2020
|I12002
|109
|1.16
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
|-
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020.  Data below for 1/23 shows rate returned to "normal".''
|-
|1/13/2020
|I12001
|78.0
|1.06
|unusual - two regions
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
|-
|5/29/2019
|I11903
|105
|1.41
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
|-
|1/28/2019
|I11901
|110
|1.35
|see SEM →
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
|}


===OLD Etch Test Data===
Alternate SiO<sub>2</sub> etch recipe with O2 included.

{| class="wikitable"
| colspan="5" |ICP#1:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch  Rate (nm/min)
|Etch  Selectivity (SiO2/PR)
|Averaged  Sidewall Angle (<sup>o</sup>)
|SEM Images
|-
|1/28/2019
|I11902
|78.1
|0.63
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
|-
|5/29/2019
|I11904
|71.1
|0.58
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
|}