View source for Vapor HF Etch (uETCH)

{{tool|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF<sub>2</sub> Gas Etcher
|manufacturer =  [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}} 
= About  =
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF<sub>2</sub> gas and, then, pumped out (to 0.3 Torr). You can also add N<sub>2</sub> gas, together with XeF<sub>2</sub> gas, into the etch chamber for some applications. There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

=Documentation=
*[[media:|System Manual]]
*[[media:|System Manual]]
*[[media:|Si Etching Profile & Results]]