Difference between revisions of "PECVD Recipes"
Jump to navigation
Jump to search
Line 1: | Line 1: | ||
{{recipes}} |
{{recipes}} |
||
=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
||
+ | == SiN deposition (PECVD #1) == |
||
+ | |||
+ | #'''Clean''' (30CLN_SN) |
||
+ | ##Initial t=10", p=2x10-2, T=250C |
||
+ | ##N<sub>2</sub> Purge t=30", p=300mT |
||
+ | ##evacuate, base pressure=2x10-2, t=10" |
||
+ | ##loop |
||
+ | ##gas stabilization, t=30" |
||
+ | ##etch chamber, t=30' |
||
+ | ##evacuate, t=10" |
||
+ | ##N<sub>2</sub> purge |
||
+ | ##evacuate |
||
+ | ##loop |
||
+ | ##SiN gas stabilization |
||
+ | ##SiN deposition( 200A coat) |
||
+ | ##evacuate |
||
+ | ##N<sub>2</sub> purge, t=30" |
||
+ | ##end |
||
+ | #'''SiN deposition''' (SiN_10) 130.8 A/min |
||
+ | ##Initial t=10" |
||
+ | ##N<sub>2</sub> purge t=30" |
||
+ | ##evacuate, t=10" |
||
+ | ##loop |
||
+ | ##SiN gas stabilization, t=30" |
||
+ | ##SiN deposition t=8'11.2" |
||
+ | ##evacuate, t=10" |
||
+ | ##N<sub>2</sub> purge t=30" |
||
+ | ##evacuate t=10" |
||
+ | ##loop |
||
+ | == SiO<sub>2</sub> deposition (PECVD #1) == |
||
+ | |||
+ | #'''Clean''' (30CLN_SN) |
||
+ | ##Initial t=10", p=2x10-2, T=250C |
||
+ | ##N<sub>2</sub> Purge t=30", p=300mT |
||
+ | ##evacuate, base pressure=2x10-2, t=10" |
||
+ | ##loop |
||
+ | ##gas stabilization, t=30" |
||
+ | ##etch chamber, t=30' |
||
+ | ##evacuate, t=10" |
||
+ | ##N<sub>2</sub> purge |
||
+ | ##evacuate |
||
+ | ##loop |
||
+ | ##SiO<sub>2</sub> gas stabilization |
||
+ | ##SiO<sub>2</sub> deposition( 200A coat) |
||
+ | ##evacuate |
||
+ | ##N<sub>2</sub> purge, t=30" |
||
+ | ##end |
||
+ | #'''SiO<sub>2</sub> deposition''' (SiO2_10) 440.5 A/min |
||
+ | ##Initial t=10" |
||
+ | ##N<sub>2</sub> purge t=30" |
||
+ | ##evacuate, t=10" |
||
+ | ##loop |
||
+ | ##SiO<sub>2</sub> gas stabilization, t=30" |
||
+ | ##SiO<sub>2</sub> deposition t=8'11.2" |
||
+ | ##evacuate, t=10" |
||
+ | ##N<sub>2</sub> purge t=30" |
||
+ | ##evacuate t=10" |
||
+ | ##loop |
||
+ | |||
=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
||
+ | == SiN deposition (PECVD #2) == |
||
+ | |||
+ | #'''Standard clean''' |
||
+ | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
||
+ | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
||
+ | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
+ | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
+ | #'''Nitride 2''' (HF, n=2.0, 93nm/min) |
||
+ | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17 |
||
+ | |||
+ | == SiO<sub>2</sub> deposition (PECVD #2) == |
||
+ | |||
+ | #'''Standard clean''' |
||
+ | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
||
+ | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
||
+ | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
+ | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
+ | #'''Oxide''' (HF, n=1.46, 25nm/min) |
||
+ | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420 |
||
+ | |||
=[[ICP-PECVD (Unaxis VLR)]]= |
=[[ICP-PECVD (Unaxis VLR)]]= |
||
+ | = Plasma Enhanced Chemical Vapor Deposition (PECVD) = |
Revision as of 10:28, 18 July 2012
Back to [[{{{1}}} Recipes]].
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiN gas stabilization
- SiN deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiN deposition (SiN_10) 130.8 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiN gas stabilization, t=30"
- SiN deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
SiO2 deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiO2 gas stabilization
- SiO2 deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiO2 deposition (SiO2_10) 440.5 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiO2 gas stabilization, t=30"
- SiO2 deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Nitride 2 (HF, n=2.0, 93nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
SiO2 deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Oxide (HF, n=1.46, 25nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420