Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
Jump to navigation
Jump to search
Content deleted Content added
add a data file |
add a data table |
||
| Line 1: | Line 1: | ||
{| class="wikitable" |
|||
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
|||
|- |
|||
|Date |
|||
|Sample# |
|||
|Etch Rate (nm/min) |
|||
|Etch Selectivity (SiO2/PR) |
|||
|Averaged Sidewall Angle (<sup>o</sup>) |
|||
|- |
|||
|10/5/2018 |
|||
|SiO2#02 |
|||
|160 |
|||
|1.2 |
|||
|82.1 |
|||
|} |
|||
[[:File:SiO2 Etch using ICP2-no O2.pdf]] |
[[:File:SiO2 Etch using ICP2-no O2.pdf]] |
||
Revision as of 15:09, 9 October 2018
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 |