Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
Jump to navigation
Jump to search
(add a table) |
No edit summary |
||
| Line 1: | Line 1: | ||
{| class="wikitable" |
{| class="wikitable" |
||
| colspan="5" |ICP# |
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
||
|- |
|- |
||
|Date |
|Date |
||
| Line 7: | Line 7: | ||
|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
||
|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
||
|- |
|||
|10-8-2018 |
|||
|SiO2#02 |
|||
|160 |
|||
|1.23 |
|||
|82.1 |
|||
|- |
|- |
||
|1/28/2019 |
|1/28/2019 |
||
|I21901 |
|||
|I11901 |
|||
| |
|146 |
||
|1. |
|1.23 |
||
| |
| |
||
|} |
|} |
||
Revision as of 18:26, 29 January 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10-8-2018 | SiO2#02 | 160 | 1.23 | 82.1 |
| 1/28/2019 | I21901 | 146 | 1.23 | |