Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
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| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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|Date |
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|Sample# |
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|Etch Rate (nm/min) |
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|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
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|- |
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|10-8-2018 |
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|SiO2#02 |
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|160 |
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|1.23 |
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|82.1 |
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|1/28/2019 |
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|I21901 |
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|146 |
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|1.23 |
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| |
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|} |
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[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf] |
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