Nick test: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Created page with "{{tool|{{PAGENAME}} |picture=PECVD1.jpg |type = Vacuum Deposition |super= Don Freeborn |phone=(805)839-7975 |location=Bay 3 |email=dfreeborn@ucsb.edu |description = PECVD Plas...")
 
No edit summary
Line 3: Line 3:
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Don Freeborn
|super= Don Freeborn
|super2= Tony Bosch
|phone=(805)839-7975
|phone=(805)839-7975
|location=Bay 3
|location=Bay 3

Revision as of 05:14, 24 August 2021

Nick test
PECVD1.jpg
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool



About

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

Detailed Specifications

  • Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
  • ~ 10mT ultimate chamber pressure
  • 13.56 Mhz excitation freq.
  • Sample size: pieces to 6” wafers
  • Automatic tuning network
  • RF Power control
  • Full computer operation
  • Standard recipes for a variety of film thicknesses

Documentation

Recipes & Process Data