InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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| colspan="3" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier
| colspan="4" |[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf 1.4] mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
|
|-
|-
|Date 
|Date 
|Sample#
|InP Etch Rtae (um/min)
|InP Etch Rate (um/min)
|Selectivity (InP/SiO2)
|Selectivity (InP/SiO2)
|Profile SEM Picture
|-
|10/4/2016
|InP#1613
|0.92
|8.9
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
|-
|12/1/2016
|InP#1614
|0.96
|12.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
|-
|12/15/2016
|InP#1615
|0.91
|9.3
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
|-
|1/23/2017
|InP#1701
|0.93
|9.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
|-
|2/7/2017
|InP#1702
|0.75
|7.7
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
|-
|2/21/2017
|InP#1703
|0.91
|11.3
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
|-
|3/21/2017
|InP#1704
|1.01
|11.3
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
|-
|4/20/2017
|inP#1705
|0.88
|10.2
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
|-
|5/4/2017
|InP#1706
|0.84
|11
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
|-
|5/19/2017
|InP#1707
|0.82
|9.9
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
|-
|7/6/2017
|InP#1708
|0.98
|12.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
|-
|8/16/2017
|InP#1709
|0.76
|8
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
|-
|8/28/2017
|InP#1710
|1
|11.7
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
|-
|10/11/2017
|InP#1711
|1
|11
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
|-
|10/23/2017
|InP#1712
|1.11
|13.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
|-
|11/21/2017
|InP#1713
|1.04
|12.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
|-
|12/7/2017
|InP#1714
|0.96
|10.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
|-
|1/2/2018
|InP#1801
|1.44
|14.3
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
|-
|3/1/2018
|InP#1802
|0.96
|9
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
|-
|4/5/2018
|InP#1803
|1.05
|11.9
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
|-
|-
|4/10/2018
|4/10/2018
|InP#1804
|1.12
|1.12
|12.8
|12.8
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
|-
|4/26/2018
|InP#1805
|1.29
|13.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
|-
|5/22/2018
|InP#1806
|0.88
|8.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
|-
|8/7/2018
|InP#1807
|0.81
|8.0
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
|-
|10/3/2018
|InP#1808
|1.01
|13.7
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
|-
|12/10/2018
|InP#1809
|1.01
|11.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
|-
|1/31/2019
|InP#1901
|0.88
|9.7
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
|-
|8/30/2020
|InP#2001
|1.11
|10.4
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]
|-
|2/3/2021
|InP#2101
|1.30
|16
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]
|-
|11/8/2021
|InP#2102
|1.24
|13.8
|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf][https://wiki.nanotech.ucsb.edu/w/images/4/49/IP210212.pdf]
|}
|}

Latest revision as of 01:00, 9 November 2021

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (um/min) Selectivity (InP/SiO2) Profile SEM Picture
10/4/2016 InP#1613 0.92 8.9 [1]
12/1/2016 InP#1614 0.96 12.1 [2]
12/15/2016 InP#1615 0.91 9.3 [3]
1/23/2017 InP#1701 0.93 9.4 [4]
2/7/2017 InP#1702 0.75 7.7 [5]
2/21/2017 InP#1703 0.91 11.3 [6]
3/21/2017 InP#1704 1.01 11.3 [7]
4/20/2017 inP#1705 0.88 10.2 [8]
5/4/2017 InP#1706 0.84 11 [9]
5/19/2017 InP#1707 0.82 9.9 [10]
7/6/2017 InP#1708 0.98 12.1 [11]
8/16/2017 InP#1709 0.76 8 [12]
8/28/2017 InP#1710 1 11.7 [13]
10/11/2017 InP#1711 1 11 [14]
10/23/2017 InP#1712 1.11 13.1 [15]
11/21/2017 InP#1713 1.04 12.1 [16]
12/7/2017 InP#1714 0.96 10.4 [17]
1/2/2018 InP#1801 1.44 14.3 [18]
3/1/2018 InP#1802 0.96 9 [19]
4/5/2018 InP#1803 1.05 11.9 [20]
4/10/2018 InP#1804 1.12 12.8 [21]
4/26/2018 InP#1805 1.29 13.6 [22]
5/22/2018 InP#1806 0.88 8.4 [23]
8/7/2018 InP#1807 0.81 8.0 [24]
10/3/2018 InP#1808 1.01 13.7 [25]
12/10/2018 InP#1809 1.01 11.4 [26]
1/31/2019 InP#1901 0.88 9.7 [27][28]
8/30/2020 InP#2001 1.11 10.4 [29]
2/3/2021 InP#2101 1.30 16 [30][31]
11/8/2021 InP#2102 1.24 13.8 [32][33]
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