SiO2 Etching Test using CF4/CHF3: Difference between revisions
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Latest revision as of 20:43, 9 November 2021
| Flourine ICP: 3.8mT, 50/900W, CF4/CHF3=30/10sccm, time=210 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Image |
| 11/5/2021 | SOFL01 | 136 | 1.2 | ||