PECVD Recipes: Difference between revisions
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=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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== SiN deposition (PECVD #1) == |
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[[File:PECVD1-SiN-Recipe.pdf|SiN deposition (PECVD #1)]] |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
Revision as of 19:01, 16 August 2012
Back to [[{{{1}}} Recipes]].
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiO2 gas stabilization
- SiO2 deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiO2 deposition (SiO2_10) 440.5 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiO2 gas stabilization, t=30"
- SiO2 deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Nitride 2 (HF, n=2.0, 93nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
SiO2 deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Oxide (HF, n=1.46, 25nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420