PECVD Recipes: Difference between revisions

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=[[PECVD 2 (Advanced Vacuum)]]=
=[[PECVD 2 (Advanced Vacuum)]]=
== SiN deposition (PECVD #2) ==
== SiN deposition (PECVD #2) ==
*[[media:PECVD2-SiN-Recipe.pdf|SiN Deposition Recipe]]

*[[media:PECVD2-SiN-Data.pdf|SiN Deposition Particle Thickness Data]]
#'''Standard clean'''
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
#'''Nitride 2''' (HF, n=2.0, 93nm/min)
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17


== SiO<sub>2</sub> deposition (PECVD #2) ==
== SiO<sub>2</sub> deposition (PECVD #2) ==
*[[media:PECVD2-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]]

*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]
#'''Standard clean'''
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
#'''Oxide''' (HF, n=1.46, 25nm/min)
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420


=[[ICP-PECVD (Unaxis VLR)]]=
=[[ICP-PECVD (Unaxis VLR)]]=

Revision as of 19:08, 16 August 2012