PECVD Recipes: Difference between revisions

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**[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
**[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
**[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
**[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) ===
*50°
**[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar - Extra N<sub>2</sub> (120W 50° Low Stress)]]
*100°C
**[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar - Extra N<sub>2</sub> (120W 100° Low Stress)]]
*250°C
**[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar - Extra N<sub>2</sub> (120W 250° Low Stress)]]

Revision as of 16:36, 20 August 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

SiN (2% SiH4 - No-Ar)

SiN (2% SiH4 - No-Ar - Extra N2)