ICP Etching Recipes: Difference between revisions
Jump to navigation
Jump to search
Line 30: | Line 30: | ||
==Al Etch (Panasonic 2)== |
==Al Etch (Panasonic 2)== |
||
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]] |
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]] |
||
==GaAs Etch (Panasonic 2)== |
|||
*[[media:|GaAs Etch Recipes - Panasonic 2 ]] |
|||
=[[ICP-Etch (Unaxis VLR)]]= |
=[[ICP-Etch (Unaxis VLR)]]= |
Revision as of 23:10, 2 October 2013
Back to Dry Etching Recipes.
Si Deep RIE (PlasmaTherm/Bosch Etch)
Single-step Si Etching (not Bosch Process!) (Si Deep RIE)
ICP Etch 1 (Panasonic E626I)
SiO2 Etching (Panasonic 1)
Al Etch (Panasonic 1)
Cr Etch (Panasonic 1)
Ti Etch (Panasonic 1)
AlGaAs Etch (Panasonic 1)
GaN Etch (Panasonic 1)
ICP Etch 2 (Panasonic E640)
SiO2 Etching (Panasonic 2)
Al Etch (Panasonic 2)
GaAs Etch (Panasonic 2)
- [[media:|GaAs Etch Recipes - Panasonic 2 ]]