Wet Etching Recipes: Difference between revisions
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| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example |
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example |
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| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf |
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example |
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| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf |
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example |
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| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf |
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example |
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Revision as of 18:26, 6 November 2013
How to use the wet etch table:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
Example Wet Etching Table (Include All Materials)
Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
---|---|---|---|---|---|---|---|---|---|
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | [| Lamponi (p.102)] | Example | Jon Doe | Example |
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |