Wet Etching Recipes: Difference between revisions
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| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example |
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example |
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example |
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example |
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example |
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example |
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Revision as of 18:36, 6 November 2013
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | Most non-Al Materials | High | None | Rate slows with time | JTB | Example | |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | Most non-Al Materials | High | None | Rate slows with time | JTB | Example | |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | Most non-Al Materials | High | None | Rate slows with time | JTB | Example | |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | Most non-Al Materials | High | None | Rate slows with time | JTB | Example |
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,