Wet Etching Recipes

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	[Lamponi (p.102)]	Example	Jon Doe	Example

The Master Table of Wet Etching (Include All Materials)

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	[Lamponi (p.102)]	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	[Lamponi (p.102)]	Example	Jon Doe	Example
Al2O3 (ALD Plasma 300C)	300MIF	~1.6		Most non-Al Materials	High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	400K	~2.2		Most non-Al Materials	High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	400K(1:4)	~1.6		Most non-Al Materials	High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	NH4OH:H2O2:H2O (1:2:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	H2O2:NH4OH:H2O (2:1:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,