Oven 5 (Labline): Difference between revisions
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= About = |
= About = |
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The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use. |
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The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces. |
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The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication. |
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=Documentation= |
=Documentation= |
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*[[ media: Watlow_982_controller.pdf|Operating Instructions]] |
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]] |
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*[[ media: Oven5.pdf|Oven 5 Manual]] |
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=Oven 5= |
=Oven 5= |
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{{ |
{{tool2|{{PAGENAME}} |
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|picture=Oven5.jpg |
|picture=Oven5.jpg |
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|type = Lithography |
|type = Lithography |
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|super= |
|super= Michael Barreraz |
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|super2= Aidan Hopkins |
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|location=Bay 5 |
|location=Bay 5 |
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|description = ? |
|description = ? |
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Latest revision as of 17:21, 30 August 2022
About
The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.
Documentation
Oven 5
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