IR Aligner (SUSS MJB-3 IR): Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/")
(SOP rev)
 
(3 intermediate revisions by the same user not shown)
Line 12: Line 12:
}}
}}
==About==
==About==
This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. The aligner is configured for the near-UV window (365 and 405 nm) and both left and has the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the maskplate edges due to the fact such plates can only be shifted ~ x mm and substrate chuck +/- 3 mm.
This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is down to 1 micron (hard contact). The aligner is configured for the near-UV window (365 and 405 nm). Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the mask plate edges due to the fact such plates can only be shifted a limited distance in the x and y.


==Detailed Specifications==
==Detailed Specifications==
Line 21: Line 21:
*Exposure optics:
*Exposure optics:
**280-450 nm/200 W mercury lamp (can filter to 350 nm)
**280-450 nm/200 W mercury lamp (can filter to 350 nm)
*Additional manufacturer options (none installed on our systems):
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
*Uniformity:
*Uniformity:
**±3% over 2" diameter
**±3% over 2" diameter
Line 31: Line 27:
==Special Notes / Additional Comments==
==Special Notes / Additional Comments==


*All units have 200 W mercury lamps
*200 W mercury lamp
*Top side alignment (visible) can be performed on this aligner as well with a quick tooling change
*Infrared Transmission Alignment System
*Infrared Transmission Alignment System:
*All models can be equipped for back side alignment using infrared light; this is used when a mask needs to be aligned to features on the substrate backside but exposed to light on the front or resist side
⚫
**Motor positioned IR light source under chuck
⚫
**Special glass chucks transparent to IR but opaque to UV and visible light
⚫
**In-line video camera/monitor for substrate backside viewing and alignment to front-side
*This aligner does not support vacuum contact mode
*For processes using this tool please go to the contact lithography process page
*For processes using this tool please go to the contact lithography process page
*This includes:
*Modified alignment stage
⚫
*Motor positioned IR light source under chuck
⚫
*Special glass chuck transparent to IR but opaque to UV and visible light
⚫
*In-line video camera/monitor for substrate backside viewing and alignment to front-side
*(Note: The vacuum contact mode is not allowed in the ITA System)


==Documentation==
==Documentation==


*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB 3 IR Alignment Mode Conversion Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB 3 IR Camera Operating Procedure]

Latest revision as of 18:56, 7 August 2020

IR Aligner (SUSS MJB-3 IR)
SussAlignerIR.jpg
Tool Type Lithography
Location Bay 6
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Mask Aligner - MJB 3 UV400 IR
Manufacturer Karl Suss America
Sign up for this tool


About

This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is down to 1 micron (hard contact). The aligner is configured for the near-UV window (365 and 405 nm). Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the mask plate edges due to the fact such plates can only be shifted a limited distance in the x and y.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • 280-450 nm/200 W mercury lamp (can filter to 350 nm)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

Special Notes / Additional Comments

  • 200 W mercury lamp
  • Top side alignment (visible) can be performed on this aligner as well with a quick tooling change
  • Infrared Transmission Alignment System:
    • Motor positioned IR light source under chuck
    • Special glass chucks transparent to IR but opaque to UV and visible light
    • In-line video camera/monitor for substrate backside viewing and alignment to front-side
  • This aligner does not support vacuum contact mode
  • For processes using this tool please go to the contact lithography process page

Documentation

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=IR_Aligner_(SUSS_MJB-3_IR)&oldid=158331"