PECVD Recipes: Difference between revisions

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{{recipes}}
{{recipes}}
=[[PECVD 1 (PlasmaTherm 790)]]=
=[[PECVD 1 (PlasmaTherm 790)]]=
== SiN deposition (PECVD #1) ==

#'''Clean''' (30CLN_SN)
##Initial t=10", p=2x10-2, T=250C
##N<sub>2</sub> Purge t=30", p=300mT
##evacuate, base pressure=2x10-2, t=10"
##loop
##gas stabilization, t=30"
##etch chamber, t=30'
##evacuate, t=10"
##N<sub>2</sub> purge
##evacuate
##loop
##SiN gas stabilization
##SiN deposition( 200A coat)
##evacuate
##N<sub>2</sub> purge, t=30"
##end
#'''SiN deposition''' (SiN_10) 130.8 A/min
##Initial t=10"
##N<sub>2</sub> purge t=30"
##evacuate, t=10"
##loop
##SiN gas stabilization, t=30"
##SiN deposition t=8'11.2"
##evacuate, t=10"
##N<sub>2</sub> purge t=30"
##evacuate t=10"
##loop
== SiO<sub>2</sub> deposition (PECVD #1) ==

#'''Clean''' (30CLN_SN)
##Initial t=10", p=2x10-2, T=250C
##N<sub>2</sub> Purge t=30", p=300mT
##evacuate, base pressure=2x10-2, t=10"
##loop
##gas stabilization, t=30"
##etch chamber, t=30'
##evacuate, t=10"
##N<sub>2</sub> purge
##evacuate
##loop
##SiO<sub>2</sub> gas stabilization
##SiO<sub>2</sub> deposition( 200A coat)
##evacuate
##N<sub>2</sub> purge, t=30"
##end
#'''SiO<sub>2</sub> deposition''' (SiO2_10) 440.5 A/min
##Initial t=10"
##N<sub>2</sub> purge t=30"
##evacuate, t=10"
##loop
##SiO<sub>2</sub> gas stabilization, t=30"
##SiO<sub>2</sub> deposition t=8'11.2"
##evacuate, t=10"
##N<sub>2</sub> purge t=30"
##evacuate t=10"
##loop

=[[PECVD 2 (Advanced Vacuum)]]=
=[[PECVD 2 (Advanced Vacuum)]]=
== SiN deposition (PECVD #2) ==

#'''Standard clean'''
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
#'''Nitride 2''' (HF, n=2.0, 93nm/min)
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

== SiO<sub>2</sub> deposition (PECVD #2) ==

#'''Standard clean'''
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
#'''Oxide''' (HF, n=1.46, 25nm/min)
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420

=[[ICP-PECVD (Unaxis VLR)]]=
=[[ICP-PECVD (Unaxis VLR)]]=
= Plasma Enhanced Chemical Vapor Deposition (PECVD) =

Revision as of 17:28, 18 July 2012

Back to [[{{{1}}} Recipes]].

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiN gas stabilization
    12. SiN deposition( 200A coat)
    13. evacuate
    14. N2 purge, t=30"
    15. end
  2. SiN deposition (SiN_10) 130.8 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiN gas stabilization, t=30"
    6. SiN deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

SiO2 deposition (PECVD #1)

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiO2 gas stabilization
    12. SiO2 deposition( 200A coat)
    13. evacuate
    14. N2 purge, t=30"
    15. end
  2. SiO2 deposition (SiO2_10) 440.5 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiO2 gas stabilization, t=30"
    6. SiO2 deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Nitride 2 (HF, n=2.0, 93nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

SiO2 deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Oxide (HF, n=1.46, 25nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420

ICP-PECVD (Unaxis VLR)

Plasma Enhanced Chemical Vapor Deposition (PECVD)

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