Oven 5 (Labline): Difference between revisions
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= About = |
= About = |
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The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use. |
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The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces. |
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The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication. |
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=Documentation= |
=Documentation= |
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Revision as of 21:21, 9 February 2017
About
The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.
Documentation
Oven 5
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