InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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| colspan="3" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
|-
|-
|Date 
|Date 
|Sample#
|InP Etch Rtae (mm/min)
|InP Etch Rtae (mm/min)
|Selectivity (InP/SiO2)
|Selectivity (InP/SiO2)
|-
|4/10/2018
|1.12
|12.8
|-
|-
|6/26/2018
|6/26/2018
|InP#1805
|1.29
|1.29
|13.6
|13.6

Revision as of 17:20, 1 May 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rtae (mm/min) Selectivity (InP/SiO2)
6/26/2018 InP#1805 1.29 13.6
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