InP Etch Rate and Selectivity (InP/SiO2)

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date	Sample#	InP Etch Rtae (mm/min)	Selectivity (InP/SiO2)
6/26/2018	InP#1805	1.29	13.6

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