InP Etch Rate and Selectivity (InP/SiO2)

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date	Sample#	InP Etch Rate (mm/min)	Selectivity (InP/SiO2)
4/26/2018	InP#1805	1.29	13.6

https://www.nanotech.ucsb.edu/wiki/images/a/ab/IP180506.jpg