InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add a SEM pic)
(add a SEM pic)
Line 1: Line 1:
{| class="wikitable"
{| class="wikitable"
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
|
|-
|-
|Date 
|Date 
Line 6: Line 7:
|InP Etch Rate (um/min)
|InP Etch Rate (um/min)
|Selectivity (InP/SiO2)
|Selectivity (InP/SiO2)
|Profile SEM Picture
|-
|-
|10/4/2016
|10/4/2016
Line 11: Line 13:
|0.92
|0.92
|8.9
|8.9
|
|-
|-
|12/1/2016
|12/1/2016
Line 16: Line 19:
|0.96
|0.96
|12.1
|12.1
|
|-
|-
|12/15/2016
|12/15/2016
Line 21: Line 25:
|0.91
|0.91
|9.3
|9.3
|
|-
|-
|1/23/2017
|1/23/2017
Line 26: Line 31:
|0.93
|0.93
|9.4
|9.4
|
|-
|-
|2/7/2017
|2/7/2017
Line 31: Line 37:
|0.75
|0.75
|7.7
|7.7
|
|-
|-
|2/21/2017
|2/21/2017
Line 36: Line 43:
|0.91
|0.91
|11.3
|11.3
|
|-
|-
|3/21/2017
|3/21/2017
Line 41: Line 49:
|1.01
|1.01
|11.3
|11.3
|
|-
|-
|4/20/2017
|4/20/2017
Line 46: Line 55:
|0.88
|0.88
|10.2
|10.2
|
|-
|-
|5/4/2017
|5/4/2017
Line 51: Line 61:
|0.84
|0.84
|11
|11
|
|-
|-
|5/19/2017
|5/19/2017
Line 56: Line 67:
|0.82
|0.82
|9.9
|9.9
|
|-
|-
|7/6/2017
|7/6/2017
Line 61: Line 73:
|0.98
|0.98
|12.1
|12.1
|
|-
|-
|8/16/2017
|8/16/2017
Line 66: Line 79:
|0.76
|0.76
|8
|8
|
|-
|-
|8/28/2017
|8/28/2017
Line 71: Line 85:
|1
|1
|11.7
|11.7
|
|-
|-
|10/11/2017
|10/11/2017
Line 76: Line 91:
|1
|1
|11
|11
|
|-
|-
|10/23/2017
|10/23/2017
Line 81: Line 97:
|1.11
|1.11
|13.1
|13.1
|
|-
|-
|11/21/2017
|11/21/2017
Line 86: Line 103:
|1.04
|1.04
|12.1
|12.1
|
|-
|-
|12/7/2017
|12/7/2017
Line 91: Line 109:
|0.96
|0.96
|10.4
|10.4
|
|-
|-
|1/2/2018
|1/2/2018
Line 96: Line 115:
|1.44
|1.44
|14.3
|14.3
|
|-
|-
|3/1/2018
|3/1/2018
Line 101: Line 121:
|0.96
|0.96
|9
|9
|
|-
|-
|4/5/2018
|4/5/2018
Line 106: Line 127:
|1.05
|1.05
|11.9
|11.9
|
|-
|-
|4/10/2018
|4/10/2018
Line 111: Line 133:
|1.12
|1.12
|12.8
|12.8
|
|-
|-
|4/26/2018
|4/26/2018
Line 116: Line 139:
|1.29
|1.29
|13.6
|13.6
|
|-
|-
|5/22/2018
|5/22/2018
Line 121: Line 145:
|0.88
|0.88
|8.4
|8.4
|
|-
|-
|8/7/2018
|8/7/2018
Line 126: Line 151:
|0.81
|0.81
|8.0
|8.0
|
|-
|-
|10/3/2018
|10/3/2018
Line 131: Line 157:
|1.01
|1.01
|13.7
|13.7
|
|-
|-
|12/10/2018
|12/10/2018
Line 136: Line 163:
|1.01
|1.01
|11.4
|11.4
|[https://www.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]

|}
|}
[https://www.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180909.pdf]
[https://www.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180909.pdf]

Revision as of 19:29, 31 January 2019

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (um/min) Selectivity (InP/SiO2) Profile SEM Picture
10/4/2016 InP#1613 0.92 8.9
12/1/2016 InP#1614 0.96 12.1
12/15/2016 InP#1615 0.91 9.3
1/23/2017 InP#1701 0.93 9.4
2/7/2017 InP#1702 0.75 7.7
2/21/2017 InP#1703 0.91 11.3
3/21/2017 InP#1704 1.01 11.3
4/20/2017 inP#1705 0.88 10.2
5/4/2017 InP#1706 0.84 11
5/19/2017 InP#1707 0.82 9.9
7/6/2017 InP#1708 0.98 12.1
8/16/2017 InP#1709 0.76 8
8/28/2017 InP#1710 1 11.7
10/11/2017 InP#1711 1 11
10/23/2017 InP#1712 1.11 13.1
11/21/2017 InP#1713 1.04 12.1
12/7/2017 InP#1714 0.96 10.4
1/2/2018 InP#1801 1.44 14.3
3/1/2018 InP#1802 0.96 9
4/5/2018 InP#1803 1.05 11.9
4/10/2018 InP#1804 1.12 12.8
4/26/2018 InP#1805 1.29 13.6
5/22/2018 InP#1806 0.88 8.4
8/7/2018 InP#1807 0.81 8.0
10/3/2018 InP#1808 1.01 13.7
12/10/2018 InP#1809 1.01 11.4 [1]

https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180909.pdf

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&oldid=155896"