Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

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|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
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|3/6/19
|3/6/2019
|I21904
|I21904
|151
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|1.23
|1.23
|85.6
|85.6
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|[[:File:SiO2 Etch using ICP2 no O2-3-06-2019.pdf]]
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Revision as of 22:19, 8 March 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6
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