Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

Revision as of 00:21, 11 August 2020

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
10/5/2018	SiO2#02	160	1.2	82.1	[1]
1/28/2019	I21901	146	1.23		[2]
3/6/2019	I21904	151	1.23	85.6	[3]
7/18/2019	I21905	162	1.37		[4]
1/16/2020	I22001	149	1.21		[5]
8/9/2020	I22002	102	0.86	caused by air leaking to CHF3 channel	[6]

@@ Line 49: / Line 49: @@
 |102
 |0.86
-|air leaking to CHF3 channel
+|caused by air leaking to CHF3 channel
 |[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 |}