InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
| colspan="4" |[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf 1.4] mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
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Revision as of 00:58, 9 November 2021

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (um/min) Selectivity (InP/SiO2) Profile SEM Picture
10/4/2016 InP#1613 0.92 8.9 [1]
12/1/2016 InP#1614 0.96 12.1 [2]
12/15/2016 InP#1615 0.91 9.3 [3]
1/23/2017 InP#1701 0.93 9.4 [4]
2/7/2017 InP#1702 0.75 7.7 [5]
2/21/2017 InP#1703 0.91 11.3 [6]
3/21/2017 InP#1704 1.01 11.3 [7]
4/20/2017 inP#1705 0.88 10.2 [8]
5/4/2017 InP#1706 0.84 11 [9]
5/19/2017 InP#1707 0.82 9.9 [10]
7/6/2017 InP#1708 0.98 12.1 [11]
8/16/2017 InP#1709 0.76 8 [12]
8/28/2017 InP#1710 1 11.7 [13]
10/11/2017 InP#1711 1 11 [14]
10/23/2017 InP#1712 1.11 13.1 [15]
11/21/2017 InP#1713 1.04 12.1 [16]
12/7/2017 InP#1714 0.96 10.4 [17]
1/2/2018 InP#1801 1.44 14.3 [18]
3/1/2018 InP#1802 0.96 9 [19]
4/5/2018 InP#1803 1.05 11.9 [20]
4/10/2018 InP#1804 1.12 12.8 [21]
4/26/2018 InP#1805 1.29 13.6 [22]
5/22/2018 InP#1806 0.88 8.4 [23]
8/7/2018 InP#1807 0.81 8.0 [24]
10/3/2018 InP#1808 1.01 13.7 [25]
12/10/2018 InP#1809 1.01 11.4 [26]
1/31/2019 InP#1901 0.88 9.7 [27][28]
8/30/2020 InP#2001 1.11 10.4 [29]
2/3/2021 InP#2101 1.30 16 [30][31]
11/8/2021 InP#2102 1.24 13.8 [32]
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