PECVD Recipes: Difference between revisions
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=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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== SiN deposition (PECVD #1) == |
== SiN deposition (PECVD #1) == |
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[[ |
*[[media:PECVD1-SiN-Recipe.pdf|SiN Deposition Recipe]] |
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*[[media:PECVD1-SiN-Data.pdf|SiN Deposition Particle Thickness Data]] |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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*[[media:PECVD1-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
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*[[media:PECVD1-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
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#'''Clean''' (30CLN_SN) |
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##Initial t=10", p=2x10-2, T=250C |
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##N<sub>2</sub> Purge t=30", p=300mT |
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##evacuate, base pressure=2x10-2, t=10" |
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##loop |
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##gas stabilization, t=30" |
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##etch chamber, t=30' |
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##evacuate, t=10" |
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##N<sub>2</sub> purge |
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##evacuate |
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##loop |
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##SiO<sub>2</sub> gas stabilization |
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##SiO<sub>2</sub> deposition( 200A coat) |
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##evacuate |
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##N<sub>2</sub> purge, t=30" |
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##end |
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#'''SiO<sub>2</sub> deposition''' (SiO2_10) 440.5 A/min |
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##Initial t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate, t=10" |
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##loop |
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##SiO<sub>2</sub> gas stabilization, t=30" |
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##SiO<sub>2</sub> deposition t=8'11.2" |
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##evacuate, t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate t=10" |
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##loop |
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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Revision as of 19:05, 16 August 2012
Back to [[{{{1}}} Recipes]].
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Nitride 2 (HF, n=2.0, 93nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
SiO2 deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Oxide (HF, n=1.46, 25nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420