PECVD Recipes: Difference between revisions

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*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]
*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]


=[[ICP-PECVD (Unaxis VLR)]]=
= [[ICP-PECVD (Unaxis VLR)]] =
== SiN deposition (Unaxis VLR) ==
==SiN deposition (Unaxis VLR) ==
=== SiN (2% SiH<sub>4</sub>) ===
*[[media:PECVD2-SiN-Recipe-5W-High-Stress.pdf|SiN Deposition Recipe (5W High Stress)]]
*50°
*[[media:PECVD2-SiN-Recipe-50W-Medium-Stress.pdf|SiN Deposition Recipe (50W Medium Stress)]]
**
*[[media:PECVD2-SiN-Recipe-120W-Low-Stress.pdf|SiN Deposition Recipe (120W Low Stress)]]
**
**
*100°C
**[[Media:PECVD2-SiN-Recipe-5W-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]]
**[[Media:PECVD2-SiN-Recipe-50W-Medium-Stress.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]]
**[[Media:PECVD2-SiN-Recipe-120W-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]]
*250°C
**
**
**

=== SiN (2% SiH<sub>4</sub> - No-Ar) ===
*50°
**
**
**
*100°C
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*250°C
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**

Revision as of 16:34, 17 August 2012