PECVD Recipes: Difference between revisions
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**[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]] |
**[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]] |
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*250°C |
*250°C |
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**[[Media:PECVD2-SiN-Recipe-5W-250C-High-Stress.pdf|SiN Deposition Recipe (5W 250° High Stress)]] |
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**[[Media:PECVD2-SiN-Recipe-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]] |
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** |
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**[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]] |
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** |
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=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
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Revision as of 16:17, 20 August 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
- 50°
- 100°C
- 250°C
SiN (2% SiH4 - No-Ar)
- 50°
- 100°C
- 250°C