PECVD Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 109: Line 109:
|
|
*[[Media:PECVD2-SiO2-Recipe-NoAr-250C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (250°)]]
*[[Media:PECVD2-SiO2-Recipe-NoAr-250C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (250°)]]
|-
|}

=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR) ===
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|- bgcolor="#D0E7FF"
!width=350 align=center|50°
!width=350 align=center|100°
!width=350 align=center|250°
|-align=left
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]]
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (100°)]]
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (250°)]]
|-
|}
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) ===
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|- bgcolor="#D0E7FF"
!width=350 align=center|50°
!width=350 align=center|100°
!width=350 align=center|250°
|-align=left
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]]
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (100°)]]
|
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (250°)]]
|-
|-
|}
|}

Revision as of 18:22, 20 August 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°