PECVD Recipes: Difference between revisions
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=== SiN (100% SiH<sub>4</sub>) === |
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*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Low-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Low Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Medium-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Medium Stress)]] |
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==SiO<sub>2</sub> deposition (Unaxis VLR) == |
==SiO<sub>2</sub> deposition (Unaxis VLR) == |
Revision as of 15:57, 1 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4)
- SiN Deposition Recipe - 100% SiH4 (100° Low Stress)
- SiN Deposition Recipe - 100% SiH4 (100° Medium Stress)
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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