ICP Etching Recipes: Difference between revisions
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===InP Etch (H<sub>2</sub> Ar)=== |
===InP Etch (H<sub>2</sub> Ar)=== |
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*[[media:UNAXIS-VLR-InP-Etch-Ar-200C-Recipe.pdf|InP Etch Recipe (H<sub>2</sub> Ar 200C)]] |
*[[media:UNAXIS-VLR-InP-Etch-Ar-200C-Recipe.pdf|InP Etch Recipe (H<sub>2</sub> Ar 200C)]] |
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*[[media:|InP-InGaAs Etch Profile (H<sub>2</sub> Ar 200C)]] |
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==GaN Etch (Unaxis VLR)== |
==GaN Etch (Unaxis VLR)== |
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*[[media:09-Plasma_Etching_of_GaN-UnaxisPM1.pdf|GaN Etch Recipe (85C)]] |
*[[media:09-Plasma_Etching_of_GaN-UnaxisPM1.pdf|GaN Etch Recipe (85C)]] |
Revision as of 15:18, 3 October 2013
Back to Dry Etching Recipes.
Si Deep RIE (PlasmaTherm/Bosch Etch)
Single-step Si Etching (not Bosch Process!) (Si Deep RIE)
ICP Etch 1 (Panasonic E626I)
SiO2 Etching (Panasonic 1)
Al Etch (Panasonic 1)
Cr Etch (Panasonic 1)
Ti Etch (Panasonic 1)
AlGaAs Etch (Panasonic 1)
GaN Etch (Panasonic 1)
ICP Etch 2 (Panasonic E640)
SiO2 Etching (Panasonic 2)
Al Etch (Panasonic 2)
GaAs Etch (Panasonic 2)
ICP-Etch (Unaxis VLR)
GaAs Etch
AlGaAs Etch
InP Etch (Unaxis VLR)
InP Etch
InP Etch (H2 Ar)
- InP Etch Recipe (H2 Ar 200C)
- [[media:|InP-InGaAs Etch Profile (H2 Ar 200C)]]