Wet Etching Recipes: Difference between revisions

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⚫
=Compound Semiconductor Etching=
How to use the wet etch table:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

=Example Wet Etching Table (Include All Materials)=


{| class="wikitable sortable"
{| class="wikitable sortable"
|-
|-
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Header text
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra column
|-
|-
| InP|| Example || Example || Example || Example || Example || Example || Example || Example || Example
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example
|-
|-
| GaAs|| Example || Example || Example || Example || Example || Example || Example || Example || Example
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example
|-
|-
| GaN|| Example || Example || Example || Example || Example || Example || Example || Example || Example
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example
|-
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf | Lamponi (p.102)]] || Example || Jon Doe || Example
|}
|}

⚫
=Compound Semiconductor Etching=


=Metal Etching=
=Metal Etching=

Revision as of 18:25, 6 November 2013

How to use the wet etch table:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Example Wet Etching Table (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [| Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [| Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [| Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [| Lamponi (p.102)] Example Jon Doe Example

Compound Semiconductor Etching

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)

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