Wet Etching Recipes: Difference between revisions
| Line 3: | Line 3: | ||
=Metal Etching= |
=Metal Etching= |
||
*[[media:|Selective Wet Etch of Cr over Ta using Cr Etchant]] |
*[[media:Ta_and_Cr_E-beam_deposition_and_wet_etch_test.pdf|Selective Wet Etch of Cr over Ta using Cr Etchant]] |
||
=Silicon etching= |
=Silicon etching= |
||
Revision as of 22:02, 28 July 2016
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the [[9 The Master Table of Wet Etching (Include All Materials)Master Table of Wet Etching. Thanks,
Metal Etching
Silicon etching
Etch rates for micromachining processing Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
Etch rates for micromachining processing-part II Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
Dielectric etching
Organic removal
Gold Plating
Chemi-Mechanical Polishing (CMP)
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | 400K | ~2.2 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | 400K(1:4) | ~1.6 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | NH4OH:H2O2:H2O (1:2:50) | ~<0.5 | High | Measured in-house | Rate slows with time | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | H2O2:NH4OH:H2O (2:1:50) | ~<0.5 | High | Measured in-house | Rate slows with time | JTB | Example |