InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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Latest InP etch test result
 
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|Date 
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|InP Etch Rtae (mm/min)
|InP Etch Rtae (um/min)
|Selectivity (InP/SiO2)
|Selectivity (InP/SiO2)
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Revision as of 23:11, 20 April 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier
Date  InP Etch Rtae (um/min) Selectivity (InP/SiO2)
4/10/2018 1.12 12.8
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