Sputter 5 (AJA ATC 2200-V): Difference between revisions
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== '''About''' == |
== '''About''' == |
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| ⚫ | The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s turbo pump (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto the carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. |
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Revision as of 21:29, 1 May 2018
About
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O2 or N2 environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s turbo pump (capable of pumping O2) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto the carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N2 and O2 used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system.
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